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Title:Monte Carlo simulation of real-space transfer transistors
Author(s):Patil, Mahesh Bhagwat
Doctoral Committee Chair(s):Ravaioli, Umberto
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Monte Carlo simulations of the Real-Space Transfer Transistor (RSTT) are carried out for various bias conditions. The ensemble Monte Carlo technique used in the simulation is described in detail. A novel method for computing transient currents from the Monte Carlo results is discussed, and its application to the RSTT is described. Detailed analysis of the RSTT, especially in the saturation regime, is performed. The mechanism responsible for the saturation of the source current is explained in terms of reverse real-space transfer (RST). The operation of the RSTT is compared with that of the charge injection transistor, and it is pointed out that the difference in the geometry of these two devices leads to different physical operation. The effect of reducing the device dimensions on the RSTT performance is discussed. A reduction in the collector length is found to improve the transconductance. Transient analysis of the RSTT is carried out which shows that the device with a smaller collector length would exhibit higher cutoff frequencies. A reduction in the width of the collector drift region is shown to result in an increased peak-to-valley ratio in the heater current, which makes the device more efficient for microwave generation.
A novel device based on RST is proposed, and its operation is illustrated with Monte Carlo simulation results. The device is predicted to have a relatively constant transconductance with respect to the drain current. Finally, a detailed analysis of RST, which is particularly relevant to the RSTT, is reported. The two-dimensional nature of the electrons in the channel of the RSTT is taken into account by calculating the wave functions and scattering rates for the two-dimensional electron gas. This model is compared to the semiclassical model and it is shown that quantization leads to higher probability of RST. The effect of quantization on simulation results for the RSTT is discussed.
Issue Date:1992
Type:Text
Language:English
URI:http://hdl.handle.net/2142/23295
Rights Information:Copyright 1992 Patil, Mahesh Bhagwat
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9236565
OCLC Identifier:(UMI)AAI9236565


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