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Browse College of Engineering by Contributor "Compton, W.D."
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(1966)Luminescent excitation spectra were measured for the F and M centers in KCl; in particular, for the F band, M band, and the M2 transition. In all 3 cases, the spectra were nearly double-Gaussian in shape, and the efficiency ...
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(1965)The method of moments is used to analyze the effect of applied uniaxial stresses on the optical absorption of alkali halides containing F centers. By measuring the first moment change of the F band due to uniaxial ...
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(1970)Silicon crystals which have been irradiated with neutrons, high energy electrons, or gamma-rays at room temperature show two strong luminescence bands in the near infrared. Both bands have a sharp zero-phonon line followed ...
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(1970)The influence of uniaxial stress upon three types of imperfections occurring in the alkali halide crystal lattice has been investigated. The imperfections are the interstitial atom, the interstitial ion, and the negative ...
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(1966)The small-signal recombination lifetimes of minority carriers were measured as a function of temperature in silicon before and after irradiation at room temperature by cobalt 60 gamma rays. The resistivity of the boron ...
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Recombination luminescence in irradiated silicon: Effects of thermal annealing and lithium impurity (1971)
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(1969)Structural characterization and optical transmission studies have been carried out on vanadate glasses based on the system V205-P205 in the range 70.0-87.5 mole % V205 0 The optical studies are compared with other studies ...
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(1970)Tunneling in boron doped p-type silicon metal-semiconductor and metal-insulator-semiconductor tunnel junctions has been studied at low temperatures by measuring the derivatives, di/dV and d2i/dV2, of the current-voltage ...
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Now showing items 1-9 of 9