Browse College of Engineering by Contributor "T.-C. Chiang"
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(2000)To determine to the chemical depth profile of the Si(111)/SiO2 interface, the photoemission intensity of the Si 2p core level from the Si(111)/SiO2 system has been measured as a function of photoelectron emission angle. ...
(2001)The technique of Derivative Photoelectron Holography is used to form three dimensional images of the local neighborhood of metal atoms terminating semiconductor surfaces. The arsenic-terminated germanium (111) surface is ...