Files in this item



application/pdf9114200.pdf (5MB)Restricted to U of Illinois
(no description provided)PDF


Title:First principles energy density and its applications to selected polar surfaces and interfaces
Author(s):Chetty, Nithayanathan
Doctoral Committee Chair(s):Martin, Richard M.
Department / Program:Physics, Condensed Matter
Discipline:Physics, Condensed Matter
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Physics, Condensed Matter
Abstract:Density Functional Theory has been successfully applied in solid state calculations where it has been customary to extract just a single number, namely the total energy. Within this formalism, we show that we can, in addition, compute an energy density which is useful despite its inherent non-uniqueness, and which comprises of a kinetic energy density, a Maxwell energy density which describes the long-range Coulomb interaction, a term that includes the exchange-correlation interaction, and other contributions that depend on the external potential.
We present explicit calculations of the energy density within the Local Density Approximation and we study selected polar (111) surfaces and interfaces. Our technique enables the calculation of the formation enthalpy of a single isolated polar (111) or $(\overline{111})$ surface or interface which is not possible using conventional total energy methods. We present surface energy results for the test Si(111) ideal surface to outline the method of calculation. We compute, for the first time, the formation enthalpies for the GaAs (111) and $(\overline{111})$ surfaces, and the Ga-rich and Al-rich interfaces in the GaAs/AlAs (111) heterojunction. Our results enable us to address questions about the stability of these structures.
Issue Date:1990
Rights Information:Copyright 1990 Chetty, Nithayanathan
Date Available in IDEALS:2011-05-07
Identifier in Online Catalog:AAI9114200
OCLC Identifier:(UMI)AAI9114200

This item appears in the following Collection(s)

Item Statistics