IDEALS Home University of Illinois at Urbana-Champaign logo The Alma Mater The Main Quad

High frequency phonon propagation and detection in III-V semiconductors

Show full item record

Bookmark or cite this item:

Files in this item

File Description Format
PDF 1991_ramsbey.pdf (7MB) Restricted to U of Illinois 1991_ramsbey PDF
Title: High frequency phonon propagation and detection in III-V semiconductors
Author(s): Ramsbey, Mark Thomas
Doctoral Committee Chair(s): Wolfe, James P.
Department / Program: Physics
Discipline: Physics
Degree: Ph.D.
Genre: Dissertation
Subject(s): high frequency phonon propagation phonon detection semiconductors low temperature phonon propagation acoustic phonon scattering epitaxial semiconductors
Abstract: Low temperature propagation and detection of high frequency acoustic phonons in GaAs and InAs is studied. .Phonon imaging is used to study scattering of acoustic phonons in GaAs and angular dispersion of acoustic phonons in InAs. Photoluminescence spectroscopy is used to study the effects of nonequilibrium phonons on excitons in epitaxial semiconductors. The propagation of high frequency phonons through crystals at low temperatures is characterized by both ballistic and diffuse processes. Ballistic propagation of heat pulses is highly anisotropic due to phonon focusing. Experimental data is compared to Monte Carlo calculations and it is shown that the heat flux from phonons scattered a few times in the bulk retains a significan~ degree of anisotropy. The scattering rate of 0. 7 ·., THz phonons in GaAs is measured and a difference between the scattering of longitudinal and transverse modes is reported. The phonon focusing pattern changes with increasing phonon frequency due to angular dispersion. The results of frequency-selective phonon-focusing experiments on InAs are compared to Monte Carlo calculations incorporating Rigid Ion and Bond-Charge lattice dynamics models. The Bond-Charge model more accurately predicts the evolution of the phonon-focusing pattern in the frequency range investigated. Predictions of the focusing pattern for very high frequency phonons ( v > 1012 Hz) are presented. The intensity of lines associated with free and impurity-bound excitons in the photolu~nescence spectrum of epitaxial GaAs changes with temperature even for T < 2°K. Similar spectral changes can be caused by nonequilibrium phonons created by a laser focused on the substrate crystal face. Experiments demonstrating the detection of nonequilibrium phonons propagating ballistically through the substrate are described. The possibilities of using this system as a detector for phonon-imaging experiments is discussed.
Issue Date: 1991
Genre: Dissertation / Thesis
Type: Text
Language: English
Rights Information: 1991 Mark Thomas Ramsbey
Date Available in IDEALS: 2011-05-11
Identifier in Online Catalog: 3471695

This item appears in the following Collection(s)

Show full item record

Item Statistics

  • Total Downloads: 0
  • Downloads this Month: 0
  • Downloads Today: 0


My Account


Access Key