IDEALS Home University of Illinois at Urbana-Champaign logo The Alma Mater The Main Quad

Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy

Show full item record

Bookmark or cite this item: http://hdl.handle.net/2142/24169

Files in this item

File Description Format
PDF Liao_Chi-chih.pdf (1MB) (no description provided) PDF
Title: Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy
Author(s): Liao, Chi-chih
Director of Research: Cheng, Keh-Yung
Doctoral Committee Chair(s): Cheng, Keh-Yung
Doctoral Committee Member(s): Hsieh, Kuang-Chien; Feng, Milton; Jin, Jianming
Department / Program: Electrical & Computer Eng
Discipline: Electrical & Computer Engr
Degree Granting Institution: University of Illinois at Urbana-Champaign
Degree: Ph.D.
Genre: Dissertation
Subject(s): molecular beam epitaxy field effect transistor hetero-junction bipolar transistor Antimonide
Abstract: For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and p-type FETs, respectively. Both compounds were grown metamorphically on InP substrates with a composite AlSb/AlAs0.5Sb0.5 buffer layer, which was proved to be effective in enhancing the epitaxial quality. By optimizing the growth conditions, the intrinsic carrier mobilities of n-type InAsSb and p-type pseudomorphic InGaSb quantum wells could reach 18000 and 600 cm2/V-s at room temperature, respectively. InAsSb FET showed a high transconductance of 350 mS/mm, which indicated the high potential in the high-speed applications. The third part of the dissertation describes the modification of the emitter-base junction of ultra-fast type-II GaAsSb-based HBTs in order to eliminate the carrier blocking and enhance the current gain. InAlP was used to replace the InP emitter and form a type-I emitter-base junction. Results for large devices show that this modification could improve DC current gain from 80 to 120. The results indicate that type-I/II InAlP/GaAsSb HBTs are promising to achieve better radio-frequency (RF) performance with higher current driving capability.
Issue Date: 2011-05-25
URI: http://hdl.handle.net/2142/24169
Rights Information: Copyright 2011 Chi-chih Liao
Date Available in IDEALS: 2011-05-25
Date Deposited: 2011-05
 

This item appears in the following Collection(s)

Show full item record

Item Statistics

  • Total Downloads: 449
  • Downloads this Month: 15
  • Downloads Today: 0

Browse

My Account

Information

Access Key