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Title:Thermodynamics of disordered C1-xCux and Si1-xAux near the metal-insulator transition
Author(s):La Madrid, Marissa Alisangco
Doctoral Committee Chair(s):Mochel, J. M.
Department / Program:Physics
metal-insulator transition
electron-phonon relaxation time
three dimensional films
thermal boundary resistance
Abstract:Measurements of the electron-phonon relaxation time are carried out, using both a direct and indirect method, in three dimensional films of Cl-xCUx and Si1-xAUx in the temperature range 0.3K-4K. The electron-phonon resistance and thermal boundary resistance are also measured. The directly measured relaxation times for C1-zCUz can agree with theoretical predictions if a longitudinal sound speed similar to that of graphite and a longitudinal to transverse speed ratio similar to that of silicate glasses are used. The results for the Sh-zAUz only qualitatively agree with theory. The measured thermal resistances are in reasonable agreement with other experiments. Comparison of the direct and indirect measurements of the relaxation times reveal that the specific heat coefficient, behaves approximately like T-.6 in Cl-zCUz below lK, in qualitative agreement with current theories describing the behavior of disordered, interacting electrons near the metal-insulator transition.
Issue Date:1990
Genre:Dissertation / Thesis
Rights Information:1990 Marissa Alisangco La Madrid
Date Available in IDEALS:2011-06-01
Identifier in Online Catalog:3480361

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