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Title:Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures
Author(s):Masselink, William Ted
Doctoral Committee Chair(s):Chang, Yia-Chung; Morkoc, Hadis
Department / Program:Physics
Subject(s):AlGaAs-GaAs heterointerfaces
multiple quantum wells
modulation-doped structures
optical absorption coefficients
exciton oscillator strengths
Abstract:This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section. two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator strengths in AIGaAs-GaAs multiple quantum wells are greatly enhanced as well widths become narrower: this effect is in excellent agreement with recent calculation. Additionally acceptor energies in quantum wells are studied both theoretically and experimentally. The theoretical study is extended to include the effects of magnetic. electric. and stress fields on acceptors in GaAs and in AIGaAs-GaAs quantum wells. In the second section an improved charge control model for \10DFETs is described which predicts some observed experimental phenomena. This model uses boundary conditions obtained from a numerical solution of Schrodinger's and Poisson's equations at an AIGaAs-GaAs heterointerface. Finally. the first measurements of electron velocity versus electric field in a modulation-doped system using the geometric magnetoresistance method are reported. These results indicate that a high low-field electron mobility is not very important for \10DFET operation.
Issue Date:1986
Genre:Dissertation / Thesis
Rights Information:1986 William Ted Masselink
Date Available in IDEALS:2011-06-03
Identifier in Online Catalog:978782

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