IDEALS Home University of Illinois at Urbana-Champaign logo The Alma Mater The Main Quad

Topics in semiconductor physics: Part I. Phonons in semiconducting alloys and alloy superlattices ; Part II. Deep energy levels of defects in mercury cadmium telluride and wurtzite semiconductors

Show full item record

Bookmark or cite this item: http://hdl.handle.net/2142/25300

Files in this item

File Description Format
PDF 1985_kobayashi.pdf (8MB) Restricted to U of Illinois 1985_kobayashi PDF
Title: Topics in semiconductor physics: Part I. Phonons in semiconducting alloys and alloy superlattices ; Part II. Deep energy levels of defects in mercury cadmium telluride and wurtzite semiconductors
Author(s): Kobayashi, Akiko
Doctoral Committee Chair(s): Dow, J. D.
Department / Program: Physics
Discipline: Physics
Degree: Ph.D.
Genre: Dissertation
Subject(s): semiconductors phonons in semiconducting alloys alloy superlattices deep energy levels mercury cadmium telluride Wurtzite semiconductors vibrational properties
Abstract: This thesis consists of two parts. The first part is devoted to the study of vibrational properties of semiconducting alloys and alloy superlattices. The second part deals with deep energy levels of defects in semiconductors. In Part I, densities of phonon states are evaluated using the recursion method for quasi-binary III-V semiconducting alloys: [equations] metastable (III-V)1_xIV2x alloys: (GaSb)1_xGe2x and (GaAs)1_xGe2x; and alloy superlattices: GaAs/AtxGa1_xAs. New features in the densities of states, not present in those of the parent compounds, are associated with vibrations arising from various atomic arrangements in these substitutionally disordered alloys. For the alloy superlattices, the expected zone-folding effects are properly accounted for in the density-of-states spectra. Raman scattering data and infrared reflection data are interpreted based on the calculated densities of states for the above three systems. In spite of the neglect of long-range forces, the present calculations prove to be useful for a qualitative understanding of the observed mode behaviors and the disorder-activated modes. In Part II, deep energy levels of sp3-bonded impurities with the central-cell atomic-like defect potential are obtained using the Green's function technique. The host materials considered here are Hgl_xCdxTe alloys which have a narrow and variable band gap, and wurtzite semiconductors: AtN, CdS, CdSe, ZnS, and ZnO, which have large band gaps. A variety of defects responsible for trapping centers are identified. Our results would be instrumental in improving the quality of these technologically important materials.
Issue Date: 1985
Genre: Dissertation / Thesis
Type: Text
Language: English
URI: http://hdl.handle.net/2142/25300
Rights Information: 1985 Akiko Kobayashi
Date Available in IDEALS: 2011-06-06
Identifier in Online Catalog: 862784
 

This item appears in the following Collection(s)

Show full item record

Item Statistics

  • Total Downloads: 1
  • Downloads this Month: 0
  • Downloads Today: 0

Browse

My Account

Information

Access Key