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X-ray generation by MeV electrons in silicon: Temperature, tilt and thickness dependence

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Title: X-ray generation by MeV electrons in silicon: Temperature, tilt and thickness dependence
Author(s): Kozlowski, Robert Edward
Doctoral Committee Chair(s): Koehler, J. S.
Department / Program: Physics
Discipline: Physics
Degree: Ph.D.
Genre: Dissertation
Subject(s): x-ray generation silicon channeling radiation Bremsstrahlung
Issue Date: 1982
Genre: Dissertation / Thesis
Type: Text
Language: English
URI: http://hdl.handle.net/2142/25416
Rights Information: 1982 Robert Edward Kozlowski
Date Available in IDEALS: 2011-06-16
Identifier in Online Catalog: 88456
 

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