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Title:Oxide charge traps and interface states at the silicon-silicon dioxide interface
Author(s):Stivers, Alan Randolph
Doctoral Committee Chair(s):Sah, C.T.
Department / Program:Physics
Subject(s):oxide charge traps
interface states
silicon-silicon dioxide interface
dry grown thermal oxides
charge trapping
Abstract:Meta1-oxide-semiconductor capacitors were fabricated with 2800 A thick dry grown thermal oxides under various conditions to determine the effects of oxidation parameters on oxide charge trapping. Electrons and holes were injected into the oxides by the VUV-bias method. In this method, electron-hole pairs are created at the gate-Si0interface by 2 irradiation with vacuum ultraviolet light of 10.2 eV photon energy. Electrons or holes are injected by applying the appropriate voltage to the gate. The charge trapped at the interface was measured by the capacitance-voltage method and located by the photocurrent-voltage method. The trapped charge was found to be within 100 A of the interface. Trapping kinetics data revealed neutral, donor-like, hole traps with capture cross sections of 6xlO-14cm2 and lxlO-15cm2. In addition, an acceptor-like electron trap with a capture cross section of lxlO-15cm2 was detected in three devices. These traps, after being positively charged by hole capture were efficient electron traps with a capture cross section of 3xlO-13cm2 • Little increase in interface states was observed as a result of trap charging. The annealing behavior of the oxide traps support the model that equates trivalent silicon with the trap with the larger hole capture cross section and non-bridging oxygen with the trap with the smaller hole capture cross section. An analysis of the annealing kinetics is given.
Issue Date:1979
Genre:Dissertation / Thesis
Rights Information:1979 Alan Randolph Stivers
Date Available in IDEALS:2011-06-27
Identifier in Online Catalog:409214

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