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Title:The thermal boundary conductance between a thin ⁴He film and its substrate
Author(s):Rutledge, James Edward
Doctoral Committee Chair(s):Mochel, J.M.
Department / Program:Physics
Discipline:Physics
Degree:Ph.D.
Genre:Dissertation
Subject(s):thermal boundary conductance
thin film 4He
third sound resonance cell
thin film substrate
Abstract:Heat flow between the substrate and a thin 4He film is responsible for the signal strength and the Q of a third sound resonance cell. Careful analysis of the signal strength and Q for films between 1.35 and 4.40 atomic layers shows that the boundary conductance between a thin film and its substrate is three to five orders of magnitude smaller than the boundary conductance between bulk liquid helium and a solid. The conductance for the bulk case is the reciprocal of the Kapitza resistance. For the thin films studied, if the boundary conductance is proportional to Tn, n lies between six and eight. A possible mechanism for the boundary conductance is discussed.
Issue Date:1978
Genre:Dissertation / Thesis
Type:Text
Language:English
URI:http://hdl.handle.net/2142/25608
Rights Information:1978 James Edward Rutledge
Date Available in IDEALS:2011-07-01
Identifier in Online Catalog:312173


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