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Title:Study of electron mobility and scattering in weak surface inversion layer on silicon
Author(s):Shiue, Chyan-Chang
Doctoral Committee Chair(s):Sah, C.T.
Department / Program:Physics
Subject(s):electron mobility
electron scattering
weak surface inversion layer
equivalent circuit
semiconductor surface
conductance threshold
Abstract:A new experimental technique, using the equivalent circuit of semiconductor surface, has been used to study the electron mobility in the surface inversion layer near the conductance threshold. This method enables us to measure very low inversion electron concentration (~10^8 e1ectrons/cm2 ) not possible previously. From the accurate electron concentration, the conductivity mobility near conduction threshold was computed. Conventional conductance measurement has also been performed to measure the conductivity mobility above threshold. The results obtained from both methods are consistent. A monotonic mobility decrease at extremely weak inversion has been observed in two samples with oxide charge density of 1.12 x lO^11 and 1.17 X l0^12cm-2 respectively. This is in contrast to previous data, showing a mobility peak near threshold. The classical model using scattering by the random Coulomb potentia1 has been used to interpret the mobility drop. The decrease of experimental mobility in extremely weak inversion was correlated to the inversion electron and oxide charge densities by means of the standard deviation of gaussian distribution of the random impurity potentials in this crude model. The present model fits the mobility variation qualitatively but not in quantitative detail. A new scattering model based on a high density of dipole potentials from process induced ~Si-OH bonds near the interface of semiconductor was proposed to explain the discrepancy. Some other factors which may make up the discrepancy were also suggested.
Issue Date:1977
Genre:Dissertation / Thesis
Rights Information:1977 Chyan-Chang Shiue
Date Available in IDEALS:2011-07-01
Identifier in Online Catalog:311472

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