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Title:Some properties of silicon p-"i"-n diodes compensated with gold
Author(s):Moore, John Sylvester
Doctoral Committee Chair(s):Holonyak, Nick, Jr.
Department / Program:Physics
Subject(s):silicon p-"i"-n diodes
gold-doped silicon diodes
Ohm's law
Abstract:The electrical and optical properties of gold-doped silicon p--"i"-n diodes at low and moderate current injection levels are examined in this work. The forward J-V characteristic of these diodes follows Ohm's law at the lowest injection levels. At slightly higher levels the current density in many cases is very nearly proportional to the cube of the applied, voltage. At still higher injection levels the current develops an oscillatory component whose frequency can vary between 5 and 100 MHz depending on the gold concentration in the "i" region of the devices. From illumination of the devices with light of various energies it has been established that .the gold acceptor deep-level is the only level which plays a role in the dc and the ac behavior of the devices. A theory based on two carrier space-charge-limited emission into the "intrinsic" region of the devices i~ developed to explain the cubic dependence of the current density on applied voltage. This theory is in excellent agreement with experimental results. Properties and parameters of the. current. oscillations are discussed. These oscillations cannot be explained on the basis of a travelling space-charge wave model since the frequency of oscillation decreases with increasing applied voltage, and the frequency at threshold is independent of the length of the "i" region. A simple space-charge fluctuation model which is in good agreement with experimental results is developed to explain the observed oscillations.
Issue Date:1967
Genre:Dissertation / Thesis
Rights Information:1967 John Sylvester Moore
Date Available in IDEALS:2011-07-07
Identifier in Online Catalog:6105133

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