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Title:Piezoreflectance of gallium arsenide
Author(s):Wells, James Everett
Doctoral Committee Chair(s):Handler, Paul
Department / Program:Physics
Gallium Arsenide (GaAs)
reflectivity spectrum
single crystal GaAs
Abstract:The response of the reflectivity spectrum of single crystal GaAs to uniaxial stress in the (001) and (111) directions was determined. Interband transitions were detected at 1.425 t .015, 1.76 t .02, 2.89, 3.12, and 4.5 eVe The two lowest energy transitions are shown compatible with r symmetry, and the Pikus and Bir deformation potential ratio d/b ~ 3.2 is determined. Second harmonic response at 1.4 eV is shown in agreement with a rigid shift model for the strain perturbation. The 2.89 and 3.12 eV transitions exhibit modulated reflectivity lineshapes expected of A symmetry. Comparison is made with the stressmodulated response of a symmetry-related transition in germanium. The deformation potential ratios, D1/5 /Dl/l = -.55 ± .03, D35/D33 = .77 ± .03, have been derived. Comparison of the hydrostatic component of the perturbation with the energy derivative of the unmodulated reflectivity spectrum shows good agreement with a rigid shift model. Finally, the 4.5 eV transition has shown a response to the strain perturbation indicative of a Delta symmetry.
Issue Date:1969
Genre:Dissertation / Thesis
Rights Information:1969 James Everett Wells
Date Available in IDEALS:2011-07-13
Identifier in Online Catalog:6067691

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