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Title:Tunneling spectroscopy in p-type silicon
Author(s):Cullen, Donald E.
Doctoral Committee Chair(s):Compton, W.D.
Department / Program:Physics
Subject(s):tunneling spectroscopy
p-type silicon
boron doped silicon metal semiconductor
metal insulator semiconductor
Abstract:Tunneling in boron doped p-type silicon metal-semiconductor and metal-insulator-semiconductor tunnel junctions has been studied at low temperatures by measuring the derivatives, di/dV and d2i/dV2, of the current-voltage characteristics as functions of applied bias voltage V. The junctions were prepared by evaporating metal contacts onto vacuum and air cleaved silicon surfaces. The general features of the tunneling conductance were found to be in qualitative agreement with existing theories of tunneling in semiconductors. Structure in the derivative data resulting from the interaction of tunneling electrons with silicon zone center optical phonons and boron local-mode phonons has been observed. The optical phonon lineshapes in the most heavily doped MIS units are shown to compare well with the theoretical line shapes in which modifications in the bulk semiconductor states arising from electron-optical phonon interactions in the semiconductor electrode have been included. Anomalous zero-bias conductance minima were observed in the tunneling characteristics of the silicon MS junctions. At least a part of this structure is attributed to intermediate state tunneling whereby electrons tunnel from one electrode to the other in two steps via intermediate states localized in the depletion region of the semiconductor. The source of the remaining structure is not known.
Issue Date:1970
Genre:Dissertation / Thesis
Rights Information:1970 Donald Edward Cullen
Date Available in IDEALS:2011-07-14
Identifier in Online Catalog:6059317

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