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Title:Antimony-based type-II superlattice infrared photodetectors on indium-arsenide substrates
Author(s):Zuo, Daniel Y.
Advisor(s):Chuang, Shun-Lien
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Infrared detectors
Type-II Superlattice
InAs substrate
electron beam induced current (EBIC)
Abstract:The wide variety of applications for mid- and far-infrared detection has spurred the study of cutting-edge technologies for use in the next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design and material quality, theoretical predictions of their high performance have yet to be realized. This work concentrates on novel designs, fabrication, and characterization of type-II superlattice infrared detectors. In this work we present the first InAs/GaSb type-II superlattice photode- tectors grown on an InAs substrate via metal-organic chemical vapor depo- sition. The design and fabrication of the devices are detailed, along with several characterization processes, including low-temperature electron beam induced current (EBIC) to study structural defects. Through this work, the optical absorption of the undoped substrate was shown to be significantly lower than that of GaSb. The detectors have a cutoff wavelength (50% re- sponsivity) of 9.5 um at 78 K. Their R0A values are on the order of 10^-2 Ohm*cm2. The typical peak responsivity is 1.9 A/W, and the devices have a peak detectivity of 6.8 * 10^9 cm*Hz^1/2 /W at 78 K.
Issue Date:2011-08-26
Rights Information:Copyright 2011 Daniel Y. Zuo
Date Available in IDEALS:2011-08-26
Date Deposited:2011-08

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