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Degradation Studies of Ultrathin Silicon Oxide Under Electrical Stress Using a Scanning Tunneling Microscope

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PDF 1999_hetrick.pdf (3MB) Restricted to U of Illinois 1999_hetrick.pdf PDF
Title: Degradation Studies of Ultrathin Silicon Oxide Under Electrical Stress Using a Scanning Tunneling Microscope
Author(s): Hetrick, James Michael
Doctoral Committee Chair(s): Nayfeh, M.
Department / Program: Physics
Discipline: Physics
Degree: Ph.D.
Genre: Dissertation
Subject(s): silicon oxide Ultrathin Films degradation Scanning Tunneling Microscopy (STM)
Issue Date: 1999
Genre: Dissertation / Thesis
Type: Text
Language: English
URI: http://hdl.handle.net/2142/28653
Other Identifier(s): 4272869
Rights Information: © 1999 James Michael Hetrick
Date Available in IDEALS: 2012-01-17
 

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