Reliability and Mode Behavior of AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers

Abstract

Data are presented on oxide-confined AlxGa1_xAs-GaAs quantum well heterostructures with oxide-AlxGa1_xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and temperature. The evaluation after 5+ years shows that a quick "sealing" oxidation prevents destructive hydrolyzation. Data are presented on current-injected and photopumped vertical cavity surface emitting lasers. Transverse mode behavior depends upon the length of the cavity and the tailoring of the ends due to the scattering method used at the Fabry-Perot interface. Data are presented on ten-stripe AlxGa1_xAs-GaAs-InYGa1_YAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al20 3 polishing compound or 10-f..lm diameter AI powder results in increased current threshold and spatial and spectral broadening.