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Title:Properties of graphene nanoribbons obtained by chemical vapor deposition
Author(s):Lyons, Austin
Advisor(s):Pop, Eric
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):graphene
nanoribbons
chemical vapor deposition (CVD)
current density
interconnects
breakdown
mobility
transistors
chemical vapor deposition
Abstract:We use chemical vapor deposition (CVD) to synthesize graphene films on copper foil. After transferring the graphene to SiO2/Si substrates, we pattern the film into graphene nanoribbons (GNRs) of width < ~50 nm and length < ~ 700 nm with Ti/Au contacts. We perform low-bias, high-bias, and temperature-dependent electrical measurements. CVD-grown GNRs have mobility values from 100 to 500 cm2V-1s-1 and current densities up to ~3 mA/μm, suggesting that polycrystalline graphene grain boundaries play a limited role in the CVD-GNR electrical properties. CVD-GNR Raman spectra are comparable to lithographically patterned GNRs from exfoliated graphene. We fit our experimental data using a self-consistent model that includes GNR fringing capacitance and observe a weak temperature dependence of CVD-GNR mobility. We find a square root dependence of maximum current density on GNR resistance, implying that breakdown is primarily due to Joule heating. The electrical characteristics of CVD-GNRs illustrate the promise of wafer-scale graphene integration while revealing variability, contacts, and impurities as future challenges for improving performance.
Issue Date:2012-02-06
Genre:thesis
URI:http://hdl.handle.net/2142/29653
Rights Information:Copyright 2011 Austin Lyons
Date Available in IDEALS:2012-02-06
Date Deposited:2011-12


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