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Title:Observation of plasma sheath modulation in the plasma bipolar junction transistor
Author(s):Houlahan, Thomas
Advisor(s):Eden, James G.
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):plasma
bipolar junction transistor
sheath
Abstract:Modulation of the plasma sheath in a plasma bipolar junction transistor (PBJT) is observed for base inputs of less than one volt. Using the recorded data, along with a collisional, high-voltage sheath model developed herein, a 359% increase in the secondary electron emission coefficient of the exposed silicon surface is inferred. Additionally, the pressure dependence of these devices is explored, with the data suggesting that smaller devices would exhibit both faster switching and higher small signal gains.
Issue Date:2012-02-06
Genre:thesis
URI:http://hdl.handle.net/2142/29761
Rights Information:(c) 2011 Thomas J. Houlahan Jr.
Date Available in IDEALS:2012-02-06
Date Deposited:2011-12


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