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| Files | Description | Format |
|---|---|---|
|
application/pdf  1971_schein.pdf (4MB) | 1971 Schein |
Description
| Title: | Electron interactions with local and resonant mode phonons in metal-insulator-semiconductor tunnel junctions |
| Author(s): | Schein, Lawrence Brian |
| Doctoral Committee Chair(s): | Compton, W.D. |
| Department / Program: | Physics |
| Discipline: | Physics |
| Degree: | Ph.D. |
| Genre: | Dissertation |
| Subject(s): | Electron interactions
tunneling electrons |
| Issue Date: | 1971 |
| Citation Info: | Interactions between tunneling electrons and a variety of phonons have been previous ly reported in metal-, insulator-semiconductor tunnel junctions including zone boundary phonons, the k~O longitudinal and transverse optical phonons, and the boron local mode phonons. We report here the observation of interactions between tunneling electrons and the local and resonant mode phonons associated with nitrogen in n-type silicon carbide and phosphorous, carbon, oxygen~ and carbonoxygen in n-type silicon. The data on silicon carbide tunnel junctions suggest that the interaction with the tunneling electrons arise from nitrogen substituted for silicon atoms and that there is one, or a,t most two, conduction band minima. Well-known diffusion techniques have been used to produce silicon with a high concentration of both boron and phosphorous impurities. Data from tunnel junctions fabricated on these materials indicate that the tunneling electrons participating in the mass defect phonon interaction do not interact in the barrier region of the semiconductor. Also, the interaction between the electron and the mass defect phonons depends on the concentration of impurity atoms, not on the majority carrier concentration. On the other hand, the negative bias k'-"O longitudinal optical phonon lineshape observed in the phosphorous diffused material that remained p-type indicates that this interaction depends on the majority carrier concentration and not the concentration of impurity atoms. Since the majority carrier concentration is a bulk property, it can be concluded that this interaction also does not occur in the barrier region of the semiconductor. |
| Genre: | Dissertation / Thesis |
| Type: | Text |
| Language: | English |
| URI: | http://hdl.handle.net/2142/30009 |
| Rights Information: | © Lawrence Brian Schein © 1971 Lawrence Brian Schein |
| Date Available in IDEALS: | 2012-03-14 |
This item appears in the following Collection(s)
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Dissertations and Theses - Physics
Dissertations in Physics