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Title:Interfacial studies of buried seminconductor surfaces
Author(s):Aburano, Richard D.
Director of Research:Chiang, Tai-Chang
Department / Program:Physics
Discipline:Physics
Degree:Ph.D.
Genre:Dissertation
Subject(s):X-ray scattering
semiconductor interfaces
buried surfaces
surface science
interface science
crystal surface studies
Abstract:X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(lll) and C6ofsemiconductor systems. The bulk of the noble-metal/Si(lll) work has centered on the Ag/Si(lll) system where the structure of the interface is dependent on the interfacial preparation. The results of the C6ofsemiconductor studies revealed C6o/Si(lll ), C6o/Si(l 00), and C6o/Ge(l 00) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(lll)-(7x7) surface were preserved. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 x 1) interfacial structure. These studies were performed in the traditional "Bragg" or reflection geometry. The use of the "Laue" or transmission geometry for similar structural studies was also evaluated.
Issue Date:1997
Genre:Dissertation / Thesis
Type:Text
Language:English
URI:http://hdl.handle.net/2142/30771
Rights Information:© 1997 Richard D. Aburano
Date Available in IDEALS:2012-04-26
Identifier in Online Catalog:4038890


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