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Title:The Si/SiO2 Interface Roughness
Author(s):Chen, Xidong
Doctoral Committee Chair(s):Gibson, J. Murray
Department / Program:Physics
Subject(s):interface roughness
metal-oxidesemiconductor field effect transistor
integrated circuits
post -oxidation annealing
Abstract:The Si/Si02 interface roughness has important effects on the performance of metal-oxide semiconductor field effect transistor devices, which dominate contemporary integrated circuit technology. There have been intense efforts to study this system due to its importance. In this work, a new transmission electron microscope technique has been developed to study the interface roughness of Si/Si02 Interfaces between Si and furnace grown Si02 layers can be unambiguously imaged with this technique, hence rich information on interface roughness can be obtained. The basic principle and related issues of this technique are discussed. The main character of random roughness is also reviewed. With this technique, the effect of post -oxidation annealing on Si(l00)/Si02 and Si(lll)/Si02 interface roughness has been investigated. It was found that as grown ~6mm thick silicon(lOO) dioxides generate a very high roughness (σ ~ 10- 15A). However, this roughness can be removed by short annealing in nitrogen at the growth temperature of 900° C. A growth model for silicon oxidation is proposed to understand this dramatic effect of postoxidation annealing at the unusually low temperature of 900° C. Roughness parameters such as correlation length and root-mean-square roughness are related to oxidation rate and diffusion constant in this model. The effect of chemical processing on the starting surface of silicon was also studied. Other related issues such as imaging processing, the
Issue Date:1997
Genre:Dissertation / Thesis
Other Identifier(s):4055727
Rights Information:©1997 Chen
Date Available in IDEALS:2012-04-26

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