Files in this item



application/pdf2002_mcmahon.pdf (2MB)Restricted to U of Illinois
2002 McmahonPDF


Title:Atomic Scale Statistical Models of Semiconductor Device Degradation
Author(s):McMahon, William Joseph
Director of Research:Hess, Karl
Department / Program:Physics
Statistical Model
Abstract:We have developed a detailed model for hot-carrier induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen(deuterium) bond dissociation by electronic excitation for both the interface and scanning tunneling microscope induced siliconhydrogen bond-breaking on the silicon surface. We demonstrate the distribution of silicon-hydrogen bond energies as the physical origin for the sub linear time dependence of the generation of siliconsilicon dioxide interface traps under hot electron stress. We demonstrate the consequences of this idea for the reliability of MOSFET devices under hot electron stress, and point out that one must interpret the shape of the wearout portion of the failure function of all intrinsic MOSFET failure processes as due to a combination of bond energy distributions, geometric effects (i.e. percolation pathways for time-dependent dielectric breakdown of the silicon dioxide), and feedback effects. The bond energy distribution has severe consequences for all failure modes that take place either in the oxide or at an interface for devices where the defects required for failure are on the order of tens. These consequences increase enormously as the required defects for failure decrease. For interface trap generation, feedback effects and geometric effects are small so we are able to derive an approximate analytic form for the failure function, and demonstrate these consequences. Finally, we introduce a multiple-carrier model for the breaking of silicon-hydrogen bonds at the interface. This model allows us to explain a variety of experimental effects that have been seen for small devices. It additionally implies a non-Arhennius behavior in the extrapolation of MOSFET lifetime vs. substrate current. Accurate lifetime extrapolation requires the incorporation of this effect.
Issue Date:2002
Genre:Dissertation / Thesis
Rights Information:Copyright by William Joseph McMahon, 2002
Date Available in IDEALS:2012-05-10
Identifier in Online Catalog:4591826

This item appears in the following Collection(s)

Item Statistics