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Description
Title: | Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications |
Author(s): | Iverson, Eric |
Advisor(s): | Feng, Milton |
Department / Program: | Electrical & Computer Eng |
Discipline: | Electrical & Computer Engr |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | M.S. |
Genre: | Thesis |
Subject(s): | Indium Phospide (InP)
double-heterojunction bipolar transistors (DHBT) Type-I Type-II Type-I/II Hot Electron Noise Figure Linearity third-order intercept point (IP3) Gain Compression Dynamic Range |
Abstract: | Dynamic range characterization of double-heterojunction bipolar transistors is examined. The measurement procedures are detailed, along with a novel procedure for calibrating load-pull measurements using all on-chip calibration standards. The use of all on-chip calibration standards can reduce potential calibration errors caused by cable movement. Also detailed are the suspected physical origins of nonlinearity in Type-I DHBTs, which are not present in Type-I/II DHBTs. Both simulated and measured data is shown to support the hypothesis that heterojunction current blocking and base push-out are major sources of nonlinearity in Type-I DHBTs. It is also shown that Type-I/II DHBTs do not exhibit such problems due to their simpler layer structure. |
Issue Date: | 2012-05-22 |
URI: | http://hdl.handle.net/2142/31018 |
Rights Information: | Copyright 2012 Eric Iverson |
Date Available in IDEALS: | 2012-05-22 |
Date Deposited: | 2012-05 |
This item appears in the following Collection(s)
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Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois -
Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering