Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications

Abstract

Dynamic range characterization of double-heterojunction bipolar transistors is examined. The measurement procedures are detailed, along with a novel procedure for calibrating load-pull measurements using all on-chip calibration standards. The use of all on-chip calibration standards can reduce potential calibration errors caused by cable movement. Also detailed are the suspected physical origins of nonlinearity in Type-I DHBTs, which are not present in Type-I/II DHBTs. Both simulated and measured data is shown to support the hypothesis that heterojunction current blocking and base push-out are major sources of nonlinearity in Type-I DHBTs. It is also shown that Type-I/II DHBTs do not exhibit such problems due to their simpler layer structure.