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Title:Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications
Author(s):Iverson, Eric
Advisor(s):Feng, Milton
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):Indium Phospide (InP)
double-heterojunction bipolar transistors (DHBT)
Type-I
Type-II
Type-I/II
Hot Electron
Noise Figure
Linearity
third-order intercept point (IP3)
Gain Compression
Dynamic Range
Abstract:Dynamic range characterization of double-heterojunction bipolar transistors is examined. The measurement procedures are detailed, along with a novel procedure for calibrating load-pull measurements using all on-chip calibration standards. The use of all on-chip calibration standards can reduce potential calibration errors caused by cable movement. Also detailed are the suspected physical origins of nonlinearity in Type-I DHBTs, which are not present in Type-I/II DHBTs. Both simulated and measured data is shown to support the hypothesis that heterojunction current blocking and base push-out are major sources of nonlinearity in Type-I DHBTs. It is also shown that Type-I/II DHBTs do not exhibit such problems due to their simpler layer structure.
Issue Date:2012-05-22
URI:http://hdl.handle.net/2142/31018
Rights Information:Copyright 2012 Eric Iverson
Date Available in IDEALS:2012-05-22
Date Deposited:2012-05


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