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3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices

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Title: 3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices
Author(s): Mohamed, Mohamed
Director of Research: Ravaioli, Umberto
Doctoral Committee Chair(s): Ravaioli, Umberto; Choquette, Kent D.; Tucker, John; Jain, Kanti
Department / Program: Electrical & Computer Eng
Discipline: Electrical & Computer Engr
Degree Granting Institution: University of Illinois at Urbana-Champaign
Degree: Ph.D.
Genre: Dissertation
Subject(s): Monte Carlo multigate self-heating phonon transport electron transport short-channel Effects quantum correction multi-subband
Abstract: The simultaneous explosion of portable microelectronics devices and the rapid shrinking of microprocessor size have provided a tremendous motivation to scientists and engineers to continue the down-scaling of these devices. For several decades, innovations have allowed components such as transistors to be physically reduced in size, allowing the famous Moore's law to hold true. As these transistors approach the atomic scale, however, further reduction becomes less probable and practical. As new technologies overcome these limitations, they face new, unexpected problems, including the ability to accurately simulate and predict the behavior of these devices, and to manage the heat they generate. This work uses a 3D Monte Carlo (MC) simulator to investigate the electro-thermal behavior of quasi-one-dimensional electron gas (1DEG) multigate MOSFETs. In order to study these highly confined architectures, the inclusion of quantum correction becomes essential. To better capture the influence of carrier confinement, the electrostatically quantum-corrected full-band MC model has the added feature of being able to incorporate subband scattering. The scattering rate selection introduces quantum correction into carrier movement.
Issue Date: 2012-06-27
Rights Information: Copyright 2012 Mohamed Mohamed
Date Available in IDEALS: 2012-06-27
Date Deposited: 2012-05

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