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Title:Fabrication and characterization of resonant cavity light-emitting transistors
Author(s):Liu, Michael
Advisor(s):Feng, Milton
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Resonant Cavity
Light-Emitting Transistors
Resonant Cavity Light-Emitting Transistors
Abstract:The development of optical interconnects and optical communication has enabled high-speed, energy-efficient and reliable data transmission in supercomputers and communication networks. Nowadays, with the improvement in computer processing speed, higher data transmission rate is required to enhance the overall performance of electronics. Light-emitting transistors (LETs) are attractive optical signal sources because of their inherent dynamic charge transport mechanism in the base terminal. LETs have demonstrated GHz modulation capability, and in order to further improve the emission intensity and spectral purity, resonant cavity is introduced into the LET structure. Resonant cavity light-emitting transistors (RCLETs) have demonstrated up to 68% enhancement in the peak emission intensity and narrower emission peak compared with conventional LETs. The work described in this thesis involves the fabrication process and device characterization of the RCLETs.
Issue Date:2013-05-24
Rights Information:Copyright 2013 Michael Liu
Date Available in IDEALS:2013-05-24
Date Deposited:2013-05

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