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Title:Planar nanowire high electron mobility transistor and down-scaling of planar nanowire
Author(s):Miao, Xin
Advisor(s):Li, Xiuling
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Gallium Arsenide (GaAs)
planar nanowire
High Electron Mobility Transistor (HEMT)
Very-large-scale integration (VLSI)
Abstract:Monolithically grown planar nanowire (NW) high electron mobility transistors (NW-HEMTs) have been demonstrated with self-aligned <110> planar GaAs NW channels capped by a thin film AlGaAs barrier. The planar NW-HEMTs exhibit uniform and scalable DC characteristics; and resolve the electrical non-uniformity issues in VLS grown NW-FETs with doped NW channels. Growth optimization through mapping the parameters of group III flow, V/III ratio and temperature has also been successfully done for the realization of high-quality down-scaled planar GaAs NWs with widths as small as 35 nm. With further development of our planar NW technology, wafer-scale low-power and high-speed VLSI circuits involving 3D planar NW channel from the bottom-up is promising.
Issue Date:2013-08-22
Rights Information:Copyright 2013 Xin Miao
Date Available in IDEALS:2013-08-22
Date Deposited:2013-08

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