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Title:Study of Zinc Oxide Thin Films Fabricated by Flow-Limited Field-Injection Electrostatic Spraying
Author(s):Dorgan, Vincent E.
Contributor(s):Kim, Kevin
Subject(s):Thin films
zinc oxide thin films
electrostatic spraying
flow-limited field-injection electrostatic spraying
Abstract:Zinc oxide (ZnO) is a transparent conducting oxide (TCO) and n-type semiconductor. For this study, ZnO thin films were deposited by the flow-limited field-injection electrostatic spraying (FFESS) method onto glass and onto oxidized silicon substrates. The effects of varying the substrate temperature, introducing aluminum doping, and adding a high-boiling-point solvent on the morphology and resistivity of the films were analyzed. The deposited ZnO thin films showed that as the substrate temperature was increased from 350 °C to 450 °C, the resistivity of the films decreased. Aluminum doping of 1.5 at. % Al:Zn and 3.0 at. % Al:Zn both decreased the resistivity. Addition of TEG to the liquid precursor further reduced the resistivity of the ZnO thin films. The 1.5 at. % Al-doped films deposited on glass showed a transmission greater than 80% in the visible range.
Issue Date:2008-12
Genre:Dissertation / Thesis
Publication Status:unpublished
Peer Reviewed:not peer reviewed
Date Available in IDEALS:2013-10-31

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