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Title:Safe Operation Area of GaAs Single Heterojunction Bipolar Transistor and Its Application
Author(s):Huang, Xiaowei
Contributor(s):Feng, Milton
Subject(s):bipolar transistors
heterojunction bipolar transistors
III-V transistors
high-power transistors
Abstract:The III-V heterojunction-bipolar (HBT) has become the standard industry device in high-speed applications, due to its superior current gain and faster electron transit times. Many high-frequency applications also require high-power operation, with some HBTs operation in the tens or hundreds of volts. The main limitation for high power operation is high-field device breakdown, a destructive process in HBTs. Device fabrication engineers tailor their processes for better breakdown characteristics, but breakdown improvement can also be accomplished through circuit techniques.
Issue Date:2011-12
Publication Status:unpublished
Peer Reviewed:not peer reviewed
Date Available in IDEALS:2014-01-13

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