Files in this item



application/pdfECE499-Fa2011-kimMyunhun.pdf (2MB)Restricted to U of Illinois
(no description provided)PDF


Title:Airstable Complementary CNTFETs by Using Cross-Linked PVA Dielectric
Author(s):Kim, Myunghun
Contributor(s):Rogers, John A.
Subject(s):carbon nanotubes
field-effect transistors
carbon-nanotube field-effect transistors
air stability
Abstract:In this study, a novel type conversion method which is compatible with the fabrication process for monolithic complementary carbon nanotube field effect transistor (CNTFET) circuits is proposed, and complementary CNTFETs with air stability are demonstrated. The n-type conversion mechanism was studied by a variety of control experiments by using individual dielectric with and without photosensitizer and different work function electrodes for source and drain region. In addition, full swing complementary CNTFET inverters with voltage gain of 11.5 were successfully implemented and operated in air with optimized process condition.
Issue Date:2011-12
Publication Status:unpublished
Peer Reviewed:not peer reviewed
Date Available in IDEALS:2014-01-13

This item appears in the following Collection(s)

Item Statistics