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Title:Modeling and Optimizing Submicrometer Graphene Transistors
Author(s):Dutta, Sumit
Contributor(s):Pop, Eric
field-effect transistors
grapheme transistors
device modeling
electrostatic modeling
fringing fields
Abstract:Graphene is a 2-dimensional nanomaterial which can be used in field-effect transistors (GFETs), with promising applications in high-frequency and low-power circuits. In this project we develop an efficient electrostatic model of GFETs to aid in the fabrication design of submicrometer-scale devices. Previous methods do not account for fringing fields, which are important in small devices. Our electrostatic model self-consistently accounts for the gate insulator, quantum, and fringing capacitances to provide the GFET carrier concentration distributions and current-voltage (I-V) characteristics. The simulation is run at a variety of gate and drain voltages and on different device geometries. The results enable us to design GFETs that achieve an optimal unity-gain frequency and that minimize performance variations due to top gate overlap or underlap.
Issue Date:2011-05
Publication Status:unpublished
Peer Reviewed:not peer reviewed
Date Available in IDEALS:2014-01-15

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