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Title:Transport and Thermopower in Graphene Transistors
Author(s):Lian, Feifei
Contributor(s):Pop, Eric
Subject(s):transistors
graphene transistors
high-field transport
thermoelectric effects
device simulation
device modeling
Abstract:Graphene is an exciting material for nanoelectronics research because of its excellent electrical and thermal properties. However, high-field transport and thermoelectric effects in graphene transistors are not yet well understood. This study introduces and tests the idea of manipulating the width of graphene transistors in order to change the high-field behavior of the device. Specifically, back-gated graphene transistors with tapered channel widths are simulated and compared to experimental data. Experimental results are fitted with a comprehensive transport model, extracting the mobility, contact resistance, conductance, and transconductance parameters. The self-consistent model includes the thermopower of graphene, which are included here within a transistor device for the first time.
Issue Date:2011-05
Genre:Other
Type:Text
Language:English
URI:http://hdl.handle.net/2142/46952
Publication Status:unpublished
Peer Reviewed:not peer reviewed
Date Available in IDEALS:2014-01-16


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