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Title:DC and RF Performance of Gallium Arsenide MESFET
Author(s):Yoon, Chang Hoon
Contributor(s):Rogers, John A.; Yoon, Jongseung
Subject(s):field-effect transistors
metal-semiconductor field-effect transistors
gallium arsenide transistors
dc performance
RF performance
Abstract:Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much higher electron mobility that causes greater saturation velocity at low electric field. Techniques such as etching, lithography and metal deposition used for the fabrication of gallium arsenide metal-semiconductor field effect transistors (GaAs MESFETs), and DC and RF performance of fabricated MESFETs, are investigated for different device geometry, specifically drain-source channel length.
Issue Date:2010-05
Genre:Other
Type:Text
Language:English
URI:http://hdl.handle.net/2142/47012
Publication Status:unpublished
Peer Reviewed:not peer reviewed
Date Available in IDEALS:2014-01-22


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