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Title:Fabrication of Patterned Quantum Dot Lasers Using Nanoscale Selective Area Epitaxy
Author(s):Lee, Jun Da
Contributor(s):Coleman, James
semiconductor lasers
quantum-dot lasers
selective-area epitaxy
quantum-dot fabrication
Abstract:Semiconductor lasers that employ quantum dot active layers, grown by molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD), have been demonstrated to hold several advantages over lasers that are based on quantum well active layers. In particular, quantum dot lasers have the potential for reduced threshold currents and are able to narrow the bandwidth of the semiconductor gain medium. Furthermore, they carry the advantage of operating temperature insensitivity. This characteristic is particularly attractive to the telecommunications industry. This thesis will discuss the principles behind the fabrication of quantum dots. In addition, the advantages of patterned quantum dots over their self-assembled counterparts will be investigated. A fabrication procedure to obtain patterned quantum dot structures through selective area epitaxy will also be outlined. The results of such an approach will be compared with data from existing literature, and an optimized approach to the fabrication process will be shown.
Issue Date:2009-12
Publication Status:unpublished
Peer Reviewed:not peer reviewed
Date Available in IDEALS:2014-01-22

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