Browse Dept. of Metallurgy and Mining Engineering (1885-1893; 1909-1989) by Subject "Engineering, Electronics and Electrical"
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High Performance Indium-Gallium-Arsenide / Indium-Aluminum-Arsenide Transistors Grown on Indium-Phosphide by Molecular Beam Epitaxy (1988)Described in this thesis are the growth by molecular beam epitaxy (MBE) and characteristics of InGaAs/InAlAs transistors. Superior properties of the InGaAs/InAlAs system have attracted a great deal of interest in electronic ...