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Title:Measurement and Analysis of SiGe Active Inductors
Author(s):Iverson, Eric
Contributor(s):Feng, Milton
active inductors
silicon-germanium inductors
on-wafer probing
Abstract:Active inductors of various configurations were previously designed in an effort to explore a SiGe-based active inductor solution. The design is specified in High-Speed SiGe BiCMOS and InP DHBT Receiver IC’s for Optical and Wireless Communications by Qiurong He (Ph.D. Dissertaion, University of Illinois at Urbana-Champaign, 2005), in which simulations showed expected values of inductance and resonant frequency. In this thesis, the S-parameters of the fabricated active inductors are measured from 500 MHz to 50 GHz using on-wafer probing techniques, so inductance values can be extracted. These values, along with measured frequency of oscillation, are then compared to the simulated values. The devices show moderate inductance over narrow bands depending on the tuning voltage applied. However, the frequencies of operation and their corresponding inductance, do not match expected values. These active inductors have potential to be used in narrowband, voltage controlled, microwave oscillators. However, a more accurate model of the SiGe active inductors must be developed in order to predict the inductance at the desired frequencies of operation.
Issue Date:2008-05
Publication Status:unpublished
Peer Reviewed:not peer reviewed
Date Available in IDEALS:2014-01-27

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