Files in this item



application/pdfECE499-Sp2013-jacobs.pdf (529kB)Restricted to U of Illinois
(no description provided)PDF


Title:Spin Doped Silicon as a Mid Infrared Metal
Author(s):Jacobs, Tom
Contributor(s):Wasserman, Dan
Subject(s):mid-infrared photonics
Abstract:This thesis focuses on the development of highly doped silicon as a mid-infrared (mid-IR) plasmonic metal. There has been great interest in designing devices and structures that effectively interact with the mid-IR spectrum of light (wavelengths of 3 – 30 μm). The mid-IR is of great interest because it houses the peaks of blackbody radiation for objects with temperatures ranging from 100 – 1400 K as well as absorption resonances for many naturally occurring materials, molecules, and organisms. Being able to have devices that efficiently and effectively interact with and control light in this segment of the spectrum would have many applications in the energy, medical, and defense fields. This thesis reports that highly doped silicon (doping concentrations on the order of 1020- 1021cm-3) acts as a metal in the aforementioned wavelength ranges. This engineered metal offers another advantage over traditional, naturally occurring metals by offering the opportunity to be engineered to fit specific needs of a particular application through altering the doping concentration.
Issue Date:2013-05
Genre:Dissertation / Thesis
Publication Status:unpublished
Peer Reviewed:not peer reviewed
Date Available in IDEALS:2014-03-12

This item appears in the following Collection(s)

Item Statistics