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Title:Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide
Author(s):Scifres, Donald Ray
Advisor(s):Holonyak, Nick, Jr.
Contributor(s):Koehler, James S.; Verdeyen, Joseph T.; Streetman, B.G.; Jordan, E.C.
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Nitrogen
Issue Date:1972-05
Genre:Dissertation / Thesis
Type:Text
URI:http://hdl.handle.net/2142/49910
Other Identifier(s):3582715
Rights Information:©1972 Donald Ray Scifres
Date Available in IDEALS:2014-06-06


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