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Title:Bubbling Transfer of Chemical Vapor Deposited Graphene on Copper to Target Substrate
Author(s):Xu, Zhangqi
Contributor(s):Lyding, Joseph W.
Subject(s):graphene transfer
Abstract:The current separation and transfer method of chemical vapor deposited (CVD) graphene on copper to dielectric substrate uses chemical etching to etch and dissolve the copper. Due to its slow reaction rate, it takes several hours to complete the chemical etching process. The high cost of metal etchant also limits its application in large-scale fabrication. A new technique for separation and transfer of graphene grown by CVD is improved and presented. The method is a mechanical way to separate copper and graphene during the electrolysis of H2O in NaOH solution. The whole separation process takes less than 60 seconds and there is no waste of metal etchant. To improve the quality and handling convenience of the transferred graphene, a plastic frame as well as a thin polymer layer are applied. Some microscopy images of transferred graphene on silicon dioxide substrate indicate better transfer quality with cost-efficiency.
Issue Date:2014-05
Date Available in IDEALS:2014-10-31

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