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Title:Calibration of Silicon Nanowire Devices with High-K Hafnium Oxide Dielectrics for BioSensing Applications
Author(s):Zhong, Yu
Contributor(s):Bashir, Rashid
Subject(s):nanowire fabrication
hafnium oxide
field effect transistors
sensing
Abstract:Biosensors based on silicon nanowire field-effect-transistors (SiNWFETs) are one of the most promising platforms for recognizing a wide range of biological and chemical species. There are many attractive properties, including low cost, ultrahigh sensitivity, direct electrical readout, and multiplexed detection. As a result, these sensors can lead to the future development of point-of-care (POC) applications. Unfortunately, a number of performance issues, such as gate leakage and current instability due to fluid contact, have prevented the widespread adoption of the technology. High-k dielectrics, such as hafnium oxide (HfO2), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. In this work, we modify the traditional process for fabricating stable HfO2 dielectric-based silicon nanowires for biosensing applications and calibrate every stage of fabrication protocol.
Issue Date:2014-05
Genre:Other
Type:Text
Language:English
URI:http://hdl.handle.net/2142/55665
Date Available in IDEALS:2014-11-05


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