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Title:Properties of the Nitrogen Isoelectronic Trap in the Group-Iii-v Semiconductor Alloys Gallium-Arsenide-Phosphide and Indium-Gallium-Phosphide
Author(s):Scifres, Donald Ray
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Condensed Matter
Issue Date:1972
Type:Text
Description:100 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1972.
URI:http://hdl.handle.net/2142/63028
Other Identifier(s):(UMI)AAI7310045
Date Available in IDEALS:2014-12-10
Date Deposited:1972


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