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|Title:||Vapor Phase Epitaxial Growth of Gallium Arsenide, Indium Phosphide, and Indium Gallium Arsenide by the Hydride Technique|
|Author(s):||Zinkiewicz, Lawrence Martin|
|Department / Program:||Electrical Engineering|
|Degree Granting Institution:||University of Illinois at Urbana-Champaign|
|Subject(s):||Engineering, Electronics and Electrical|
|Abstract:||The use of InGaAsP alloys for optical fiber communication systems is discussed. The advantages and various types of vapor phase epitaxial growth systems are examined before looking at the open tube growth process in detail. Using the criteria for high purity systems, which are thoroughly reviewed, a vertical hydride system capable of growing InGaAsP alloys has been built. The initial growth of GaAs and InP is described and problems encountered with the use of this semi-automatic system are examined.
The correction of these problems led to the construction of an automatic system which is discussed in detail. Undoped GaAs and InP expitaxial layers have been grown with carrier concentrations as low as 3 x 10('13) cm('-3) (77(DEGREES)K) for the former and 2 x 10('14) cm('-3) (77(DEGREES)K) for the latter with liquid nitrogen mobilities as high as 90,000 cm('2)/Vs and 60,000 cm('2)/Vs respectively. The results of photoluminescence measurements on some of these samples are examined.
Lattice-matched In(,x)Ga(,1-x)As layers have been grown on InP substrates but display broad x-ray line widths. The probable causes of the broad line widths have been examined. Initial results indicate that the preheat treatment affects the line widths.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981.
|Date Available in IDEALS:||2014-12-12|
This item appears in the following Collection(s)
Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois