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|Title:||Automated Variable Temperature Hall Effect Measurements and Analysis of N-Type Gallium-Arsenide, Indium-Phosphide and Their Lattice Matched Alloy Semiconductors (Hall Effect)|
|Author(s):||Lepkowski, Thomas Richard|
|Department / Program:||Electrical Engineering|
|Degree Granting Institution:||University of Illinois at Urbana-Champaign|
|Subject(s):||Physics, Electricity and Magnetism|
|Abstract:||A thorough background to the theoretical analysis of Hall effect carrier concentrations and mobilities in n-type GaAs, InP, and their related direct gap semiconductor alloys is presented along with a thorough treatment of those factors affecting the measurement. The design and construction of the equipment used to make measurements from 4.2 K to 373 K are described. The programming required both for the control of the measurements and the analysis of the data is discussed in detail. Results are presented for high purity n-type GaAs, InP and In(,0.53)Ga(,0.47)As.
It was found that both the concentration and mobility may be accurately measured with the described system and both may be consistently and accurately modeled in some GaAs and InP samples. Because of possible inhomogeneity, other GaAs, InP and InGaAs samples cannot be accurately modeled even if such effects as deep donors, multiply charged acceptors, and depletion or accumulation of the surface or interface are included.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.
|Date Available in IDEALS:||2014-12-15|
This item appears in the following Collection(s)
Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois