Files in this item

FilesDescriptionFormat

application/pdf

application/pdf8511675.pdf (6MB)Restricted to U of Illinois
(no description provided)PDF

Description

Title:Low Temperature Photoluminescence Characterization of High Purity Gallium-Arsenide and Indium-Phosphide (Residual Impurities, Epitaxy)
Author(s):Skromme, Brian John
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:The analysis of low temperature photoluminescence (PL) spectra can be divided into three parts. First, the recombination processes responsible for each of the observed spectral peaks must be determined; second, the defects and impurities which participate in those processes must be identified; and finally, that information can be applied to study the incorporation of residual impurities and defects in various types of material. New results in each of these areas are presented for GaAs and InP.
Recombination processes are identified both in the case of excited-state donor-to-acceptor recombination in GaAs and InP, which is modeled theoretically and compared to experiment, and in the case of defect-related peaks in the spectrum of molecular beam epitaxial (MBE) GaAs, which are found to involve both donor-to-acceptor and band-to-acceptor recombination. Ion implantations of C, Be, Mg, and Si into InP are used to identify the corresponding acceptor levels in that material.
The residual acceptors characteristic of GaAs grown by liquid-phase epitaxy (LPE), AsCl(,3)-vapor-phase epitaxy (VPE), AsH(,3)-VPE, metalorganic chemical vapor deposition (MOCVD), and MBE and determined using PL measurements on over 230 samples grown in 35 different laboratories. The results are compared to photothermal ionization data which indicate the residual donor species in the same samples; the behavior of amphoteric column IV impurities is thus determined for each of the growth techniques.
The effect of growth conditions on impurity incorporation in GaAs is studied spectroscopically in several cases, such as the influence of the AsCl(,3) "mole fraction" in AsCl(,3)-VPE and the AsH(,3) mole fraction in AsH(,3)-VPE; source baking in AsH(,3)-VPE; As/Ga ratio, growth temperature, and source purity in MOCVD; and As/Ga ratio, and type and purity of the As source in MBE. The origin of many of the residual impurities characteristic of various growth techniques is inferred from these studies.
Finally, the characteristic residual acceptors in InP produced by bulk synthesis, LPE, and PH(,3)-VPE are identified.
Issue Date:1985
Type:Text
Description:183 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.
URI:http://hdl.handle.net/2142/69304
Other Identifier(s):(UMI)AAI8511675
Date Available in IDEALS:2014-12-15
Date Deposited:1985


This item appears in the following Collection(s)

Item Statistics