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Title:Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)
Author(s):Meehan, Kathleen
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:The effects of thermal annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient D(Al-Ga) is found to be on the order of 1 x 10('-18) cm('2)/s at 900(DEGREES)C.
Diffusion of Zn or Si has been found to cause interdiffusion of both of the Column III constituents (Al and Ga) and possibly both of the Column V constituents (P and As). This behavior, which yields layer disordering, occurs at lower temperatures than the temperature required for ordinary thermal disordering. With proper masking techniques, the layer intermixing (i.e., Al-Ga interdiffusion in Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures) can be accomplished selectively, thus raising the effective band gap of the diffused region. This process has been successfully used to define stripe-geometry buried heterostructure laser diodes.
Issue Date:1985
Description:117 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.
Other Identifier(s):(UMI)AAI8600266
Date Available in IDEALS:2014-12-15
Date Deposited:1985

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