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|Title:||Effects of Depth Variation of Substrate Dopant Impurity Concentration on the Interface Trap Density Determination in Mos Devices (Semiconductor)|
|Department / Program:||Electrical Engineering|
|Degree Granting Institution:||University of Illinois at Urbana-Champaign|
|Subject(s):||Engineering, Electronics and Electrical|
|Abstract:||The effect of dopant impurity concentration variation with depth on the interface trap density determination using the high-frequency capacitance-voltage (HFCV) or Terman method with a constant dopant concentration assumption has been quantitatively studied. A systematic correction scheme for nonconstant dopant concentration has been designed. Even if the substrate dopant concentration is not available, this correction scheme can still provide an estimation of the error in the interface trap density due to the nonconstant dopant concentration profile.
The circuit technique for semiconductor analysis (CTSA) is employed to calculate ideal HFCV curves used in the Terman method. Theoretical error in the small-signal equivalent circuits for semiconductors due to the finite lump size has been analyzed. The discretization error of semiconductor capacitance in one single lump is found to be proportional to the cube of the lump size divided by the Debye length. The accumulated error in the flat-band semiconductor capacitance is proportional to the square to the lump size divided by the Debye length. It is shown that the lump size must be less than the Debye length to maintain accuracy in the small-signal equivalent circuit. Based on these results, a size selection rule of the discretization lump is proposed, which can consistently generate a grid system under a user prescribed accuracy requirement.
The new analysis has been applied to estimate the errors in the interface and oxide trap densities generated during the avalanche electron injection stress of MOS capacitors. The results indicate that the errors caused by the nonuniform hydrogenated acceptor (boron) doping profile in the peaked donorlike interface trap density at 0.25 eV above midgap and in the turnaround of midgap voltage shift are very small.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.
|Date Available in IDEALS:||2014-12-15|
This item appears in the following Collection(s)
Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois