Files in this item

FilesDescriptionFormat

application/pdf

application/pdf8823138.pdf (4MB)Restricted to U of Illinois
(no description provided)PDF

Description

Title:Internal Photoemission and Energy Band Discontinuities at Semiconductor Heterojunctions
Author(s):Haase, Michael Albert
Doctoral Committee Chair(s):Stillman, Gregory E.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:A new technique has been developed to measure the conduction band discontinuities ($\Delta$E$\sb{\rm c})$ at certain semiconductor heterojunctions. The technique involves measuring the spectral response of specially designed p$\sp{+}$N$\sp{-}$ heterojunction photodiodes. Internal photoemission from the valence band of the p$\sp{+}$ layer is observed in these devices and power law fits are used to accurately extract the threshold energy. A simple calculation then gives the size of the conduction band heterobarrier. Subsequent analysis of small barrier lowering effects allows $\Delta$E$\sb{\rm c}$ to be deduced directly, accurately, and reliably.
This technique has been applied to GaAs-Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As (x $>$ 0.5) heterojunctions at room temperature and to Ga$\sb{0.47}$In$\sb{0.53}$As-InP heterojunctions over a temperature range of 135 K to 300 K.
The results and advantages of this technique are compared to previous experimental efforts.
Issue Date:1988
Type:Text
Description:128 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.
URI:http://hdl.handle.net/2142/69397
Other Identifier(s):(UMI)AAI8823138
Date Available in IDEALS:2014-12-15
Date Deposited:1988


This item appears in the following Collection(s)

Item Statistics