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 Title: Internal Photoemission and Energy Band Discontinuities at Semiconductor Heterojunctions Author(s): Haase, Michael Albert Doctoral Committee Chair(s): Stillman, Gregory E. Department / Program: Electrical Engineering Discipline: Electrical Engineering Degree Granting Institution: University of Illinois at Urbana-Champaign Degree: Ph.D. Genre: Dissertation Subject(s): Engineering, Electronics and Electrical Abstract: A new technique has been developed to measure the conduction band discontinuities ($\Delta$E$\sb{\rm c})$ at certain semiconductor heterojunctions. The technique involves measuring the spectral response of specially designed p$\sp{+}$N$\sp{-}$ heterojunction photodiodes. Internal photoemission from the valence band of the p$\sp{+}$ layer is observed in these devices and power law fits are used to accurately extract the threshold energy. A simple calculation then gives the size of the conduction band heterobarrier. Subsequent analysis of small barrier lowering effects allows $\Delta$E$\sb{\rm c}$ to be deduced directly, accurately, and reliably.This technique has been applied to GaAs-Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As (x $>$ 0.5) heterojunctions at room temperature and to Ga$\sb{0.47}$In$\sb{0.53}$As-InP heterojunctions over a temperature range of 135 K to 300 K.The results and advantages of this technique are compared to previous experimental efforts. Issue Date: 1988 Type: Text Description: 128 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988. URI: http://hdl.handle.net/2142/69397 Other Identifier(s): (UMI)AAI8823138 Date Available in IDEALS: 2014-12-15 Date Deposited: 1988
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