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Title:Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor
Author(s):Henderson, Timothy Scott
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:Described in this thesis are the growth and characterization of (In,Ga)As/(Al,Ga)As modulation-doped field-effect transistors (MODFETs). The use of a thin strained layer of (In,Ga)As for the current-carrying channel takes advantage of the superior transport properties of this material while maintaining high crystal quality necessary for good device performance. Further, because of the small bandgap of the (In,Ga)As layer, the need for a high AlAs mole fraction layer as in the GaAs/(Al,Ga)As MODFET is eliminated. The use of a low AlAs mole fraction layer allows for superior device performance at cryogenic temperatures.
A growth technique using molecular beam epitaxy is described, with particular attention paid to the growth and optimization of the (In,Ga)As channel layer. Sheet carrier concentration, low- and midelectric field mobility and velocity-field characteristics, as well as electron saturation velocity, are determined as functions of various structural parameters, particularly InAs mole fraction. Photoreflectance measurements and theoretical calculations are used to describe the band structure in the (In,Ga)As quantum well. Finally, outstanding dc and microwave performances are demonstrated at room and cryogenic temperatures. These results indicate that the (In,Ga)As/(Al,Ga)As MODFET is a superior alternative to the GaAs metal-semiconductor field-effect transistor and GaAs/(Al,Ga)As MODFET for use as a high frequency, low noise amplifier and switch.
Issue Date:1988
Description:129 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.
Other Identifier(s):(UMI)AAI8908705
Date Available in IDEALS:2014-12-15
Date Deposited:1988

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